SiC chips are made from 4H single-crystal Silicon Carbide. They have many outstanding properties, including high-efficiency power conversion and the ability to handle high voltage and high power applications. This gives them significant advantages in high-temperature and high-pressure environments, such as in electric vehicles, 5G and satellite communications, and industrial applications.
SiC wafers are thinned through processes such as grinding, lapping, and chemical mechanical polishing (CMP) to achieve specific thicknesses (<200um／350um／500um) for different applications. This thinning improves thermal dissipation, reduces the weight of the chip module, and enhances chip performance, thereby meeting various application needs.
Bay Union offers a range of standardized thinning wheels, from #2000 coarse grinding to #30000 ultra-fine polishing, paired with various thinning machines to achieve high GR (grinding ratio) and long-lasting wheel performance. Additionally, for high-hardness P-grade SiC wafers, we have designed high-cutting-efficiency wheels to achieve rapid thinning.