TMTS Virtual Application
Ultrasonic Circular Ramping SiC
Ultrasonic Grinding of SiC (Silicon Carbide) : (Helical) Circular Ramping｜Hantop Intelligence Tech.
HIT utilized ultrasonic machining module for (helical) circular ramping of SiC (silicon carbide). The high frequency micro-vibration helped reduce cutting forces, which helped improve surface roughness by 72%. Ultrasonic-assisted grinding mechanism also brought better particle flushing, preventing the tool from ceramic dust accumulation.
💡Learn more about HIT Ultrasonic-assisted Machining at https://www.hit-tw.com/
SiC (Silicon Carbide) bears excellent chemical and mechanical stability with high-temperature and thermal shock resistance, which also makes it an ideal material for semiconductor fabrication commodities, such as SiC substrates, SiC wafer susceptors, SiC wafer carriers, SiC E-chucks, etc.
However, due to the high hardness and brittleness of silicon carbide, the risk of (helical) circular ramping SiC resides in poor surface quality with massive tool marks. If the grinding forces are not well-controlled (due to serious cumulative ceramic particles stuck in the pores of grinding tool) during the process, it would take more time to do tool dressing in order to restore the grinding ability of the tool.
HIT ultrasonic-assisted (helical) circular ramping of SiC (silicon carbide) helped reduce grinding forces. This helped improve the surface roughness (Sa) by 72% with mitigating tool marks on the surface. The tool constantly lifting from workpiece allowed for easier inflow of cutting fluid, which brought better particle flushing and prevented the tool from massive ceramic dust accumulation.
💡Learn more about Ultrasonic Machining on SiC case at https://www.hit-tw.com/advantagedetails.aspx?id=188
HIT utilized ultrasonic machining module for (helical) circular ramping of SiC (silicon carbide). The high frequency micro-vibration helped reduce cutting forces, which helped improve surface roughness by 72%. Ultrasonic-assisted grinding mechanism also brought better particle flushing, preventing the tool from ceramic dust accumulation.
💡Learn more about HIT Ultrasonic-assisted Machining at https://www.hit-tw.com/
SiC (Silicon Carbide) bears excellent chemical and mechanical stability with high-temperature and thermal shock resistance, which also makes it an ideal material for semiconductor fabrication commodities, such as SiC substrates, SiC wafer susceptors, SiC wafer carriers, SiC E-chucks, etc.
However, due to the high hardness and brittleness of silicon carbide, the risk of (helical) circular ramping SiC resides in poor surface quality with massive tool marks. If the grinding forces are not well-controlled (due to serious cumulative ceramic particles stuck in the pores of grinding tool) during the process, it would take more time to do tool dressing in order to restore the grinding ability of the tool.
HIT ultrasonic-assisted (helical) circular ramping of SiC (silicon carbide) helped reduce grinding forces. This helped improve the surface roughness (Sa) by 72% with mitigating tool marks on the surface. The tool constantly lifting from workpiece allowed for easier inflow of cutting fluid, which brought better particle flushing and prevented the tool from massive ceramic dust accumulation.
💡Learn more about Ultrasonic Machining on SiC case at https://www.hit-tw.com/advantagedetails.aspx?id=188
