TMTS Virtual Application
Ultrasonic Grinding of Silicon Carbide
👍🏻 Machining Efficiency: 3x Higher
👍🏻 Workpiece Quality: 1.4x Better
【hit Ultrasonic Process Solution】SiC (Silicon Carbide): Wafer Susceptor in Semiconductor MOCVD Process
In the MOCVD reaction chamber, silicon carbide susceptors are used to support the wafer/substrates. The susceptor must effectively absorb thermal energy to assist thin-film growth and avoid reacting with the gases. Therefore, the product quality of the susceptor directly affects the quality of the semiconductor epitaxial layers.
Adopting HIT Ultrasonic Process Solution for Rough Grinding of SiC:
✨With HIT ultrasonic, the high frequency micro-vibration helped reduce grinding force.
✨This allowed for enhancement in the machining parameters. The machining efficiency was increased after raising the feed rate 3x higher than the original process.
✨The reduction in grinding force helped control and reduce the size of edge-cracks on the SiC workpiece, which resulted in an improvement in workpiece quality.
✨The crack size was 1.4x smaller than that without ultrasonic under the same machining parameters (F 200mm/min).
👉🏻Want to know more about ultrasonic module products? Feel free to CONTACT US at https://www.hit-tw.com/contact.aspx 👈🏻
👍🏻 Workpiece Quality: 1.4x Better
【hit Ultrasonic Process Solution】SiC (Silicon Carbide): Wafer Susceptor in Semiconductor MOCVD Process
In the MOCVD reaction chamber, silicon carbide susceptors are used to support the wafer/substrates. The susceptor must effectively absorb thermal energy to assist thin-film growth and avoid reacting with the gases. Therefore, the product quality of the susceptor directly affects the quality of the semiconductor epitaxial layers.
Adopting HIT Ultrasonic Process Solution for Rough Grinding of SiC:
✨With HIT ultrasonic, the high frequency micro-vibration helped reduce grinding force.
✨This allowed for enhancement in the machining parameters. The machining efficiency was increased after raising the feed rate 3x higher than the original process.
✨The reduction in grinding force helped control and reduce the size of edge-cracks on the SiC workpiece, which resulted in an improvement in workpiece quality.
✨The crack size was 1.4x smaller than that without ultrasonic under the same machining parameters (F 200mm/min).
👉🏻Want to know more about ultrasonic module products? Feel free to CONTACT US at https://www.hit-tw.com/contact.aspx 👈🏻
